Shichang Zou, materials scientist, was selected as the academician of the Chinese Academy of Sciences (Academy Member) in 1991. He graduated from Tangshan Jiaotong University in 1952, and received his Ph.D. degree from Moscow Nonferrous Metal Institute in 1958. He was appointed as visiting professor of Fraunhofer-Gesellschaft Solid Technological Research Institute from 1979 to 1980. In the 1960s, Zou was responsible for key national defense subject Type A separating film processing and shaping. As the main inventor of selective preference in the technical guidelines, he made remarkable contribution to the nuclear industry and atomic bomb explosion for our country. Since the early 1970s, Zou conducted systematic study on ion beam solid interactions and used ion beams for the doping, synthesis, fabrication and surface layer analysis of semiconductor materials. He innovatively applied carbon dioxide laser backside irradiation to achieve enhanced annealing effect of ion implantation damage, and developed the first l20-gate gallium arsenide gate array circuit with the all directions ion implantation technology in China. He also processed the first group of blinking holographic gratings with reactive ion beam in China, and developed the Ion Beam Enhanced Deposit (IBED) technology and the synthesized silicon nitride and titanium nitride film. As the early pioneer in SOI material in China, he developed the CMOS／SOI circuit. In the 1990s, Zou was dedicated to the development of the semiconductor industry of mainland China. He participated in the establishment of several IC companies, including Shanghai Huahong Electronics Co., Shanghai Simcomix Electronics, DuPont Photomasks and Shanghai Ericsson Simtek Electronics Co. With the support of Zou, Shanghai Huahong Grace Semiconductor Manufacturing Corporation has insisted on cultivating doctorial students by combination of production, learning and research for the last more than ten years, which has been fully recognized by the Guidance office of Shanghai academician expert workstation. The Shanghai Huahong Grace Semiconductor academician expert workstation was approved in early 2014, and awarded as the national demonstration academician expert workstation in 2016. He published over 200 scientific papers, mentored more than 30 Ph.D. students, and won 14 prizes including National First-Grade Invention prize. He is an honorary international committee member of the conference of Ion Beam Modification of Materials (IBMM).