Prof. Byong-Guk Park has been working on spintronic research field since he obtained his Ph.D titled “A study on magnetic tunnel junction with insulating barriers formed by ozone oxidation” from KAIST in 2003. He is currently the group leader of Nanospintronics Laboratory at the Department of Materials Science and Engineering, KAIST, and mainly focuses on the development of spin-orbit torque-based magnetic random access memory (MRAM), spin-based logic devices, spin thermoelectrics. Before he joined KAIST in 2012, he worked as a senior research scientist at Hitachi Cambridge Laboratory in Cambridge, UK, from 2006 to 2011, and as a post-doctoral researcher at University of Twente in the Netherlands, from 2003 to 2006.
Prof. Park is a leading scientist in antiferromagnetic spintronics as he published a pioneering work of antiferromagnetic tunnel junctions in Nature Materials 10, 347 (2011), followed by the field-free spin-orbit torque switching [Nature Nanotechnology 11, 878 (2016)] and the formation of spin thermopile [Advanced Functional Materials 26, 5507 (2016)]. He also developed spintronic logic devices including spin Hall effect transistor [Science 330, 1801 (2010)], and complementary spin logic device [Nature Electronics 1, 878 (2018)], which performs logic and memory function simultaneously.
Prof. Park has published 68 papers including 1 Science, 2 Nature Materials, 1 Nature Nanotechnology, 1 Nature Electronics, 1 Nature Physics, 2 Nature Communications, 2 Advanced Functional Materials, and 5 Physical Review Letters and 10 registered patents. His achievement in spin-orbit torque-based MRAM was selected as Top 10 Science News of the Year 2016 by the Korean Federation of Science and Technology Societies, Top 100 National R&D Excellence in 2018. He also was nominated as one of the Leading Scientists in 100 Future Technologies in 2017 by National Academy of Engineering of Korea.