Reznichenko Mikhail Fedorovich
Electrically active defect centers in Ge, Si, A3B5, A2B6 and in solid solutions based on them by modulation spectroscopy were studied.
Optimized technologies for producing gallium arsenide, indium arsenide, indium antimonide and solid solutions based on them.
Optimized production technology for mercury cadmium telluride.
Used electron-beam activation of processes in the gas phase in the production of semiconductor silicon.