Doctor of Sciences, Professor, specialist in the field of condensed matter physics, semiconductor materials science and scientific instrumentation, the leader of the leading scientific school of Russia "the Physical basis for molecular beam epitaxy of semiconductor heterosystems and nanostructures" in Institute of semiconductor Physics SB RAS. Pchelyakov, O. P., in the group of authors in 1993 awarded the title of Laureate of the State prize of Russia in science and technology. Since 1997, O. P. Pchelyakov has been leading the development of equipment’s and technology for growing semiconductor structures in outer space at the international space station. In this project a device has been developed for epitaxy in the vacuum of space. In recent years, a team of employees under the leadership of O. P. Pchelyakov the country's first specialized ultra-high vacuum systems for laser isotope separation have been developed. The main direction of the research work of O.P. Pchelyakov is the study of growth processes and mechanisms of defect formation in MLE of multi-layer epitaxial semiconductor systems and nanostructures. O. P. Pchelyakov co-authored more than 200 scientific papers in peer-reviewed foreign and Central Russian journals, including 40 papers over the past 5 years. O. P. Pchelyakov pays great attention to the training of scientific personnel. As a professor of Tomsk state University, he directs the branch of the Department of semiconductor physics of the University at ISP SB RAS.