APAM

I.G. Neizvestny - a specialist in the field of semiconductor physics and physical fundamentals of semiconductor devices

Fundamental results in the field of semiconductor physics and physical fundamentals of semiconductor devices. Investigated the physical processes at the interface semiconductor-dielectric, the interaction of radiation with semiconductor heterostructures. Led a computer simulation of the formation of thin surface layers.

Works on quantum cryptography, surface-barrier biosensors.

Scope of scientific activity I.G.Neizvestny: interaction of radiation with semiconductor heterostructures, computer simulation of the formation of thin surface layers, quantum cryptography, surface barrier biosensors.