G. Ya. Krasnikov is a scientist in the field of physics of semiconductors, semiconductor devices, the technology of creating super-large-scale integrated circuits (VLSI) and the problems of ensuring the quality of their industrial production. Author and co-author of 312 scientific papers in Russian and foreign peer-reviewed publications, 4 scientific monographs and more than 40 copyright certificates and patents.
The main areas of research are micro- and nanoelectronics. He created scientific and technological bases for the formation of semiconductor structures with controlled and stable electrophysical parameters, and also revealed patterns of non-equilibrium processes in the transition regions of the silicon-silicon dioxide-metal system interfaces on the entire technological route for manufacturing integrated circuits.