The breakthrough success of AV Dvurechensky and his colleagues in solving the problem of eliminating defects was “The discovery of the phenomenon of pulsed oriented solidification of solids (“ laser annealing ”)”. The essence of the phenomenon was the restoration of the crystal structure after a pulse of laser radiation on ion-doped semiconductor wafers with an amorphous layer. The rate of transformation of the amorphous layer into the single-crystal region turned out to be many orders of magnitude higher than the typical values of the crystal growth rates, and this fact aroused particular interest among researchers in various regions to laser annealing. AV Dvurechensky and his colleagues established the laws of structural transformations and solubility of alloying elements at high crystallization rates under the conditions of pulsed laser / electronic action on amorphous silicon layers. From the standpoint of practical applications, the developed direction has provided the most complete realization of the advantages of ion implantation technology, which has now become the main and virtually the only technology in the processes of doping semiconductors in the manufacture of electronic products worldwide. Pulsed (laser) annealing has also become the basic technology in the world's leading manufacturers of various circuits and devices of electronic equipment. Based on current studies of morphological changes in the surface during growth from molecular, ion-molecular beams and subsequent laser annealing, A. V. Dvurechensky and co-workers developed a technology for creating a new class of semiconductor heterostructures with quantum dots in the germanium / silicon system (two-dimensional and three-dimensional ensembles quantum dots). On the basis of the obtained fundamental results in the direction of "Nanotechnology and nanomaterials", new approaches to the creation of semiconductor devices have been developed.